Performance Comparison of Wide Band Gap Semiconductors Based Multilevel Converters for Grid Application
In recent years, Wide Band Gap (WBG) semiconductors have gained attention in power electronics due to their superior characteristics, such as lower channel resistance in SiC MOSFETs and low gate capacitance in GaN HEMTs, resulting in higher efficiency compared to silicon IGBTs. Multilevel converters distribute DC bus voltage evenly among semiconductors, reducing blocking voltage and switching losses. This allows the use of semiconductors with blocking voltages of 650 or 1200V, beneficial for power systems and electric traction applications where voltages can exceed 2kV while maintaining high efficiency. This study aims to compare the performance of multilevel converters using Si IGBT, SiC MOSFET, and GaN HEMT in scenarios where DC sources are connected to the grid, such as solar power plants or energy storage systems (ESS).
June 25, 2024. 4 pm Room B –.